- 您现在的位置：买卖IC网 > Sheet目录141 > RB021VA90TR (Rohm Semiconductor)DIODE SCHOTTKY 90V 0.2A TUMD2
              www.rohm.com 2/3 2011.04 - Rev.C○c 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB021VA90 ?Electrical characteristic curves(Ta=25?C) 0 5 10 15 20 25 30 AVE:6.40ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 10 100 1000 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) 1ms IM=10mA IF=0.1A 300us time Mounted on epoxy board FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS trr DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 1 10 100 1000 0 100 200 300 400 500 600 0.1 1 10 100 1000 10000 100000 0 102030405060708090 1 10 100 0102030 f=1MHz 420 430 440 450 460 470 AVE:442.8mV Ta=25℃ IF=0.2A n=30pcs 0 50 100 150 200 250 300 Ta=25℃ VR=90V n=30pcs AVE:28.68uA Ct分布 60 61 62 63 64 65 66 67 68 69 70 AVE:64.35pF Ta=25℃ f=1MHz VR=0V n=10pcs 0 5 10 15 20 25 30 8.3ms Ifsm 1cyc AVE:14.6A 0 5 10 15 20 25 30 1 10 100 8.3ms 8.3ms Ifsm 1cyc 0 5 10 15 20 25 30 1 10 100 t Ifsm 0 0.1 0.2 0.3 0 0.1 0.2 0.3 0.4 0.5 Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ Ta=125℃ Ta=25℃ Ta=75℃ DC D=1/2 Sin(θ＝180) |